The PECVD (Plasma Enhanced Chemical Vapor Depositor) reacts the delivered process gases in an RF (radio frequency) induced plasma to deposit dielectric materials such as silicon dioxide and silicon nitride. It has a round lower electrode whose diameter is 16” and can accommodate single or multiple wafers to capacity. This electrode can also be heated up to 350°C while the top electrode can be heated to 150°C with their embedded resistive heaters. Current recipes are available for silicon dioxide, silicon nitride, and oxygen cleaning.
Available gases are: SiH4 (5% silane in He), NH3, SF6, O2, N2, N2O, and He.